Transistor MJE13009: Specifications: pinout, Equivalent

This article discusses the basic Specifications on the 13009 high voltage high power (up to 100W) bipolar triode. It is mainly used for operation in high-frequency switching circuits in switching power supplies. Manufacturers position its ability to be used with rated voltages from 115 to 220 V, with a fairly large inductive load and constant current up to 12 A

The case of the Transistor in question sometimes bears the prefix “MJE” in addition to the numbers 13009. At one time he pointed to the main developer and designer, the American company Motorolla. Around the early 2000s, the latter transferred its semiconductor production to a separate division of ON Semiconductor. Nowadays, with similar symbols at the beginning of the marking, similar devices are produced by other manufacturers.

Pinout and external appearance

The pinout of the 13009, which is available in a plastic case TO-220, is as follows: on the left is the base (1-B), in the middle is the collector (2-K), the last pin is the emitter (3-K). Transistors with similar packages: CASE-221A, TO-3PN, O-220, TO-225, TO-247 have similar contact arrangements. The metal part of the package has a special hole for attaching it to the radiator. The image below shows the appearance of the device and its pinout.


The pins are designed for hole mounting on the board. When soldering, note that the metal part of the housing has a physical connection to the collector contact. Today’s updated versions are lead-free (Pb-Free) and made to RoSH environmental requirements.


The following maximum parameters are typical. These are common to most Transistors labeled 13009 on the package from different manufacturers. At the same time, continuous operation at such values is not allowed and most likely will lead to overheating, as a consequence – to the destruction of the silicon structure of the product.

Absolute Specifications 13009

  • collector-base voltage (VCB max) up to 700 V;
  • collector-emitter voltage (VCE max) up to 400 V;
  • emitter-base voltage (VEB max) up to 9 V;
  • collector current (IC) up to 12 A;
  • peak collector current (ICM) up to 25 V;
  • Power dissipation (PC) up to 100 W;
  • p-n junction temperature (TJ) up to +150 oC.

The image below shows the safe operating area (SOA) regions for Transistor 13009. It is also necessary to familiarize oneself with the rated values of the electrical parameters in order to work out the best solutions for its use in specific electrical circuits. Additionally study the operation of the device on graphs: volt-ampere Specification, power reduction with temperature, HFE gain variation, etc., usually presented by manufacturers in the technical documentation (datasheet) for their products.


An increase in temperature, including in the external environment above +25oC significantly degrades the technical and thermal properties of semiconductor components. Therefore, mounting the Transistor body on a heatsink is one of the prerequisites for its use in heavy load applications.

Equivalents for Replacement

Sometimes, for Replacement of 13009 it is advisable to use less powerful Equivalents, which are almost identical in their technical parameters: 13008, 13007, 13005. It is advisable to read their datasheet before repairing. In some cases, a 2SC2335 may also be suitable as a substitute. From domestic semiconductor triodes recommend KT8138I, KT8260A, KT8209A.


Currently, 13009 is produced by different companies. The bulk of these Transistors come from China. The first versions of the device were produced by: Motorolla, Philips NXP. Now on the shelves of radio stores there are products of: ON Semiconductor, MOSPEC, STM, UTS, TGS, and others.

You can download and upload their datasheet for 13009 as well as other manufacturers by clicking here.

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