{"id":2686,"date":"2022-08-18T05:20:40","date_gmt":"2022-08-18T12:20:40","guid":{"rendered":"https:\/\/chipdatasheet.com\/?p=2686"},"modified":"2023-08-09T04:02:33","modified_gmt":"2023-08-09T11:02:33","slug":"s8050-pines-reemplazo-equivalente-caracteristicas","status":"publish","type":"post","link":"https:\/\/chipdatasheet.com\/es\/transistores\/s8050-pines-reemplazo-equivalente-caracteristicas\/","title":{"rendered":"Transistor S8050: Diagrama de pines, reemplazo, equivalente y caracter\u00edsticas"},"content":{"rendered":"\n<p class=\"wp-block-paragraph\">El transistor bipolar de silicio S8050 est\u00e1 dise\u00f1ado para su uso en amplificadores push-pull de clase B de baja frecuencia y otros amplificadores de prop\u00f3sito general. Tambi\u00e9n se utiliza en diversos m\u00f3dulos basados en Arduino, circuitos de control de LED, fuentes de luz y otros componentes electr\u00f3nicos. Su estructura es n-p-n.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Diagrama de pines<\/h2>\n\n\n\n<p class=\"wp-block-paragraph\">Veamos el Diagrama de pines del S8050 en un encapsulado TO-92 para montaje en hueco y en un encapsulado SOT-23 con bisagras. En el segundo caso est\u00e1 marcado como J3Y. En la figura se puede ver c\u00f3mo est\u00e1n dispuestas las patas del dispositivo en cuesti\u00f3n en ambas versiones.<\/p>\n\n\n<div class=\"wp-block-image\">\n<figure class=\"aligncenter size-full\"><a href=\"https:\/\/chipdatasheet.com\/wp-content\/uploads\/2022\/08\/S8050-Transistor-Pinout-1.jpg\"><span itemprop=\"image\" itemscope itemtype=\"https:\/\/schema.org\/ImageObject\"><img itemprop=\"url image\" loading=\"lazy\" decoding=\"async\" width=\"730\" height=\"471\" src=\"https:\/\/chipdatasheet.com\/wp-content\/uploads\/2022\/08\/S8050-Transistor-Pinout-1.jpg\" alt=\"S8050-Transistor-Pinout-1\" class=\"wp-image-2140\" srcset=\"https:\/\/chipdatasheet.com\/wp-content\/uploads\/2022\/08\/S8050-Transistor-Pinout-1.jpg 730w, https:\/\/chipdatasheet.com\/wp-content\/uploads\/2022\/08\/S8050-Transistor-Pinout-1-300x194.jpg 300w, https:\/\/chipdatasheet.com\/wp-content\/uploads\/2022\/08\/S8050-Transistor-Pinout-1-620x400.jpg 620w\" sizes=\"auto, (max-width: 730px) 100vw, 730px\" \/><meta itemprop=\"width\" content=\"730\"><meta itemprop=\"height\" content=\"471\"><\/span><\/a><\/figure>\n<\/div>\n\n\n<h2 class=\"wp-block-heading\">Caracter\u00edsticas<\/h2>\n\n\n\n<p class=\"wp-block-paragraph\">Empecemos por los valores m\u00e1ximos posibles, sobrepasar estos par\u00e1metros es inaceptable y conduce al fallo del transistor. Todas las caracter\u00edsticas m\u00e1ximas del S8050 se midieron a temperatura ambiente +25\u00b0C, aqu\u00ed est\u00e1n:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>tensi\u00f3n entre C-B VCBO (Ucb max) &#8211; 40 V;<\/li>\n\n\n\n<li>tensi\u00f3n entre C-E VCEO (Uce max) &#8211; 25 V;<\/li>\n\n\n\n<li>tensi\u00f3n entre E-B VEBO (Ueb max) &#8211; 5 V;<\/li>\n\n\n\n<li>corriente a trav\u00e9s del colector IC (m\u00e1x):<\/li>\n\n\n\n<li>en encapsulado SOT-23 IC (max) &#8211; 500 mA;<\/li>\n\n\n\n<li>en encapsulado TO-92 IC (max) &#8211; 700 mA.<\/li>\n\n\n\n<li>potencia, disipada en la uni\u00f3n del colector<\/li>\n\n\n\n<li>en encapsulado SOT-23 Pk 300 mW;<\/li>\n\n\n\n<li>1 W en encapsulado TO-92<\/li>\n\n\n\n<li>temperatura admisible del cristal +150 \u00b0\u0421;<\/li>\n\n\n\n<li>temperatura de funcionamiento de -55 a +150\u00b0C.<\/li>\n<\/ul>\n\n\n\n<p class=\"wp-block-paragraph\">Otros par\u00e1metros importantes a los que hay que prestar atenci\u00f3n son las caracter\u00edsticas el\u00e9ctricas. Se midieron a una temperatura de +25\u00b0C. Los dem\u00e1s valores se dan en una columna separada de la tabla, que se llama \u00abModos de medici\u00f3n\u00bb.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\"><strong>Caracter\u00edsticas el\u00e9ctricas del transistor S8050 (a T = +25 \u00b0C):<\/strong><\/p>\n\n\n\n<figure class=\"wp-block-table\"><table><tbody><tr><td><strong>Parameter<\/strong><\/td><td><strong>Test Conditions<\/strong><\/td><td><strong>Symbol<\/strong><\/td><td><strong>MIN<\/strong><\/td><td><strong>TYP<\/strong><\/td><td><strong>MAX<\/strong><\/td><td><strong>UNIT<\/strong><\/td><\/tr><tr><td>Tensi\u00f3n de ruptura colector-base<\/td><td>I<sub>C<\/sub>&nbsp;= 100\u03bcA, I<sub>E<\/sub>&nbsp;= 0V<\/td><td>V<sub>(BR)C\u0412O<\/sub><\/td><td>40<\/td><td><\/td><td><\/td><td>V<\/td><\/tr><tr><td>Tensi\u00f3n de ruptura colector-emisor<\/td><td>I<sub>C<\/sub>&nbsp;= 1mA, I<sub>B<\/sub>&nbsp;= 0V<\/td><td>V<sub>(BR)CE\u041e<\/sub><\/td><td>25<\/td><td><\/td><td><\/td><td>V<\/td><\/tr><tr><td>Tensi\u00f3n de ruptura emisor-base<\/td><td>I<sub>E<\/sub>=100\u03bcA, I<sub>C<\/sub>=0<\/td><td>V<sub>(BR)EBO<\/sub><\/td><td>5<\/td><td><\/td><td><\/td><td>V<\/td><\/tr><tr><td>Corriente de desconexi\u00f3n del colector<\/td><td>V<sub>C\u0412<\/sub>= 40V, I<sub>\u0415<\/sub>&nbsp;= 0<\/td><td><br>I<sub>C\u0412O<\/sub><\/td><td><\/td><td><\/td><td>0,1<\/td><td>\u03bcA<\/td><\/tr><tr><td>Corriente de desconexi\u00f3n del colector<\/td><td>V<sub>CE<\/sub>= 20V, I<sub>\u0412<\/sub>= 0<\/td><td>I<sub>CE\u041e<\/sub><\/td><td><\/td><td><\/td><td>0,1<\/td><td>\u03bcA<\/td><\/tr><tr><td>Corriente de corte del emisor<\/td><td>V<sub>EB<\/sub>&nbsp;= 6V, I<sub>C<\/sub>&nbsp;= 0<\/td><td>I<sub>EBO<\/sub><\/td><td><\/td><td><\/td><td>0,1<\/td><td>\u03bcA<\/td><\/tr><tr><td>Ganancia de corriente DC<\/td><td>V<sub>CE<\/sub>=1 V,I<sub>C<\/sub>= 50 mA<br>V<sub>CE<\/sub>=1 V, I<sub>C<\/sub>=500 mA<\/td><td>h<sub>FE1<\/sub><br>h<sub>FE2<\/sub><\/td><td>120<br>50<\/td><td><\/td><td>350<\/td><td><\/td><\/tr><tr><td>Tensi\u00f3n de saturaci\u00f3n colector-emisor<\/td><td>I<sub>C<\/sub>= 500mA, I<sub>B<\/sub>&nbsp;= 50mA<\/td><td>V&nbsp;<sub>CE(sat)<\/sub><\/td><td><\/td><td><\/td><td>0,6<\/td><td>V<\/td><\/tr><tr><td>Tensi\u00f3n de saturaci\u00f3n base-emisor<\/td><td>I<sub>C<\/sub>= 500mA, I<sub>B<\/sub>&nbsp;= 50mA<\/td><td>V&nbsp;<sub>\u0412E(sat)<\/sub><\/td><td><\/td><td><\/td><td>1,2<\/td><td>V<\/td><\/tr><tr><td>Frecuencia de transici\u00f3n<\/td><td>V<sub>CE<\/sub>=6 V, I<sub>C<\/sub>= 20 mA,<br>f=30 MHz<\/td><td>f<sub>T<\/sub><\/td><td>150<\/td><td><\/td><td><\/td><td>MHz<\/td><\/tr><\/tbody><\/table><\/figure>\n\n\n\n<p class=\"wp-block-paragraph\">En funci\u00f3n de la relaci\u00f3n de transferencia de corriente, los transistores S8050 en encapsulado SMD J3Y se dividen en tres tipos:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>L de 120 a 200;<\/li>\n\n\n\n<li>H de 200 a 350;<\/li>\n\n\n\n<li>J de 300 a 400.<\/li>\n<\/ul>\n\n\n\n<p class=\"wp-block-paragraph\">Equivalentes<br>El transistor S8050 puede sustituirse por equivalentes:<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li>2SC1008, 2SC1009;<\/li>\n\n\n\n<li>2SD471A, , KSC1008;<\/li>\n\n\n\n<li>KSP06, KSP42;<\/li>\n\n\n\n<li>KSP43, MPS650;<\/li>\n\n\n\n<li>MPS650G, MPS651;<\/li>\n\n\n\n<li>MPS651G, MPS6532;<\/li>\n\n\n\n<li>MPS8050, MPSA42;<\/li>\n\n\n\n<li>MPSA43, MPSW01;<\/li>\n\n\n\n<li>MPSW05, MPSW05G;<\/li>\n\n\n\n<li>MPSW06, MPSW06G;<\/li>\n\n\n\n<li>MPSW42, S9013;<\/li>\n\n\n\n<li>SS8050, ZTX457.<\/li>\n<\/ul>\n\n\n\n<p class=\"wp-block-paragraph\">Existen equivalentes en ruso: KT6114A, KT968B, KT6114B, KT6114B.<\/p>\n\n\n\n<p class=\"wp-block-paragraph\">El par complementario del dispositivo en cuesti\u00f3n es S8550. En encapsulado SMD est\u00e1 marcado como 2TY.<\/p>\n\n\n\n<h2 class=\"wp-block-heading\">Fabricantes<\/h2>\n\n\n\n<p class=\"wp-block-paragraph\">Muchas empresas est\u00e1n involucradas en la producci\u00f3n del transistor S8050, datasheet de todos ellos se puede descargar en una secci\u00f3n <a href=\"https:\/\/chipdatasheet.com\/s8050\/\">especial en este enlace<\/a>. All\u00ed encontrar\u00e1 los documentos originales de cada componente en formato PDF.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>El transistor bipolar de silicio S8050 est\u00e1 dise\u00f1ado para su uso en amplificadores push-pull de clase B de baja frecuencia y otros amplificadores de prop\u00f3sito general. Tambi\u00e9n se utiliza en diversos m\u00f3dulos basados en Arduino, circuitos de control de LED, fuentes de luz y otros componentes electr\u00f3nicos. Su estructura es n-p-n. Diagrama de pines Veamos [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":2140,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[28],"tags":[],"class_list":["post-2686","post","type-post","status-publish","format-standard","has-post-thumbnail","","category-transistores"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v21.5 - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Transistor S8050: Diagrama de pines, reemplazo, equivalentes y caracter\u00edsticas<\/title>\n<meta name=\"description\" content=\"Documentaci\u00f3n de las caracter\u00edsticas t\u00e9cnicas, diagramas de pines y equivalentes de sustituci\u00f3n del transistor S8050. 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